jiang su changjiang electronics technology co., ltd to - 220 plastic - encapsulate transistors 3dd13005 transistor ? npn ? features power dissipation p cm : 1.5 w ? t amb=25 ??? collector current i cm: 4 a c ollector - base voltage v ( br ) cbo : 700 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 1000 a ? i e =0 700 v collector - emitter breakdown vol tage v(br) ceo i c = 10 m a ? i b =0 400 v emitter - base breakdown voltage v(br) ebo i e = 1000 a ? i c =0 9 v collector cut - off current i cbo v cb = 700 v ? i e =0 1000 a collector cut - off current i ceo v ce = 400 v ? i b =0 100 a emitter cut - off current i ebo v eb = 9 v ? i c =0 1000 a dc current gain h fe v ce = 5 v, i c = 100 0 m a 10 40 collector - emitter saturation voltage v ce (sat) i c = 2000m a,i b = 500 m a 0.6 v b ase - emitter saturation voltage v be (sat) i c = 2000m a, i b = 5 0 0 m a 1.6 v transition frequency f t v c e =10 v, ic=500ma f = 1mhz 5 mhz fall time t f 0.9 s storage time t s i b1 = - i b2 =0.4a, i c =2a v cc =120v 4 s classification of h fe rank range 10 - 15 15 - 20 20 - 25 25 - 30 30 - 35 35 - 40 1 2 3 to ?a 220 1.base 2.collector 3 . emitter
d c1 c a a1 b b1 e f e1 l l1 e e1 t o-220-3l p ackage outline dimensions symbol a a1 b b1 c c1 d e e1 e e1 f l l1 |? min 4.470 2.520 0.710 1.170 0.310 1.710 10.010 8.500 12.060 4.980 2.590 13.400 3.560 3.790 max 4.670 2.820 0.910 1.370 0.530 1.370 10.310 8.900 12.460 5.180 2.890 13.800 3.960 3.890 min 1.176 0.099 0.028 0.046 0.012 0.046 0.394 0.335 0.475 0.196 0.102 0.528 0.140 0.149 max 0.184 0.111 0.036 0.054 0.021 0.054 0.406 0.350 0.491 0.204 0.114 0.543 0.156 0.153 dimensions in millimeters dimensions in inches 0.100typ 2.540typ |?
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